Effects of mechanical strain on amorphous silicon thin-film transistor electrical stability
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چکیده
منابع مشابه
Electrical response of amorphous silicon thin-film transistors under mechanical strain
We evaluated amorphous silicon thin-film transistors ~TFTs! fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. The oncurrent and hence the electron linear mobility m depend on strain « as m5m0(11263«), where tensile strain has a positive sign and the strain is parallel to the TFT source-drain current path. Upon the applica...
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